1.

国際会議録
国際会議録
1. Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation
Ciobanu, F. ; Pensl, G. ; Afanas'ev, V. ; Schoner, A.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.693-696,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
Ciobanu, F. ; Frank, T. ; Pensl, G. ; Afanas'ev, V. ; Shamuilia, S. ; Schoner, A. ; Kimoto, T.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.991-994,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529