Quality of Thermally Grown Oxides in 4H-SiC Over Nitrogen or Phosphorus Implanted Regions
- 著者名:
- 掲載資料名:
- Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 640
- 発行年:
- 2001
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995505 [1558995501]
- 言語:
- 英語
- 請求記号:
- M23500/640
- 資料種別:
- 国際会議録
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High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
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