1.

国際会議録
国際会議録
1. Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
von Bardeleben, H.J. ; Cantin, J.L. ; Baranov, P.G. ; Mokhov, E.N.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.509-512,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
2.

国際会議録
国際会議録
2. Phosphorus-Related Shallow and Deep Defects in 6H-SiC
Baranov, P.G. ; Ilyin, I.V. ; Mokhov, E.N. ; von Bardeleben, H.J. ; Cantin, J.L.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.503-506,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436