First-Principle Calculations of the Electronic Structure and Elastic Constants of Arsenic Doped β-SiC

First-Principle Calculations of the Electronic Structure and Elastic Constants of Arsenic Doped β-SiC

著者名:

掲載資料名:

Physical and Numerical Simulation of Material Processing VI : Selected, peer reviewed papers from the 6th International Conference on Physical and Numerical Simulation of Materials Processing (ICPNS 2010), November 16-19, 2010, Guilin, China

シリーズ名:

Materials science forum

シリーズ巻号:

704-705

発行年:

2012

パート:

1

開始ページ:

492

終了ページ:

497

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054199
シリーズID:	PA00000012
会議名:	International Conference on Physical and Numerical Simulation of Materials Processing (ICPNS 2010)
回次:	6th
会議開催地:	Guilin, China
会議開催年:	2010.11.16-2010.11.19
論文注記:	6th International Conference on Physical and Numerical Simulation of Materials Processing (ICPNS 2010), November 16-19, 2010, Guilin, China

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