1.

国際会議録
国際会議録
1. Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry
N. Thierry-Jebali ; R. Chiriac ; C. Brylinski
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1185-1188,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
2.

国際会議録
国際会議録
2. Active Devices for Power Electronics: SiC vs III-N Compounds - The Case of Schottky Rectifiers
C. Brylinski ; O. Ménard ; N. Thierry-Jebali ; F. Cayrel ; D. Alquier
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.879-884,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648