1.

国際会議録
国際会議録
1. Optimization of VLS Growth Process for 4H-SiC P/N Junctions
S. Sejil ; M. Lazar ; F. Cayrel ; D. Carole ; C. Brylinski
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.205-208,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures
S. Sejil ; F. Laariedh ; M. Lazar ; D. Carole ; C. Brylinski
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.789-792,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters
S. Sejil ; L. Lalouat ; M. Lazar ; D. Carole ; C. Brylinski ; F. Jomard ; D. Planson ; G. Ferro ; C. Raynaud
出版情報: Silicon Carbide and Related Materials 2016.  pp.63-66,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897