1.

国際会議録
国際会議録
1. SURFACE RECOMBINATION VELOCITY AND RECOMBINATION LIFETIME IN IRON CONTAMINATED SILICON
Buczkowski, A. ; Shimura, F. ; Rozgonyi, G.A.
出版情報: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.495-504,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-7
2.

国際会議録
国際会議録
2. EBIC and SEM Studies of Enhanced DIffusion of Arsenic along Misfit Dislocations in Epltaxial Si/Si(Ge)
Braga, N. ; Buczkowski, A. ; Rozgonyi, G.A.
出版情報: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.157-166,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-1
3.

国際会議録
国際会議録
3. Non-Contact Full Wafer Evaluation of Deep Levels in Silicon Via Temperature Dependent Surface Recombination Velocity, and Carrier Lifetime
Buczkowski, A. ; Rozgonyi, G.A. ; Shimura, F.
出版情報: Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing II.  pp.1-14,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-3