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Rh: A DOPANT WITH MID-GAP LEVELS IN InP AND InGaAs AND SUPERIOR THERMAL STABILITY

著者名:
Scheffler, H.
Srocka, B.
Dadgar, A.
Kuttler, M.
Knecht, A.
Heitz, R.
Bimberg, D.
Hyeon, J. Y.
Schumann. H.
さらに 4 件
掲載資料名:
Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
325
発行年:
1994
開始ページ:
329
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992245 [1558992243]
言語:
英語
請求記号:
M23500/325
資料種別:
国際会議録

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