1.

国際会議録
国際会議録
1. Comparative Study of GaN MOVPE Growth Processes Using Two Different "Surface Preparation-Carrier Gas" Combinations
Vennegues, P. ; Haffouz, S. ; Bouille, A. ; Leroux, M. ; Beaumont, B.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.273-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
2.

国際会議録
国際会議録
2. Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE
Leroux, M. ; Beaumont, B. ; Grandjean, N. ; Massies, J. ; Gibart, P.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.695-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
3.

国際会議録
国際会議録
3. From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
Leroux, M. ; Lahreche, H. ; Semond, F. ; Lauegt, M. ; Feltin, E. ; Schnell, N. ; Beaumont, B. ; Gibart, P. ; Massies, J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.795-798,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356