1.

国際会議録
国際会議録
1. RBS/CHANNELING AND TEN ANALYSIS OF THIN SANDWICHED EPI-LAYERS OF GERMANIUM ON SILICON
Swanson, M.L. ; Parikh, N.P. ; Frey, E.C. ; Sandhu, G.S. ; Chu, W.K. ; Baribeau, J.-M. ; Song, Kechang ; McCaffrey, J. ; Jackman, T.E.
出版情報: Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A..  pp.581-586,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 138
2.

国際会議録
国際会議録
2. INTERFACE STRUCTURE OF Ge/Si SUPERLATTICES DETERMINED BY X-RAY ABSORPTION FINE STRUCTURE
Aebi, P. ; Tyliszczak, T. ; Hitchcock, A.P. ; Baribeau, J.-M. ; Lockwood, D.L. ; Jackman, T.E.
出版情報: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.253-258,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 220