1.

国際会議録
国際会議録
1. Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1089-1092,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1041-1044,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Design and Implementation of RESURF MOSFETs in 4H-SiC
Banerjee, S. ; Chatty, K. ; Chow, T.P. ; Gutmann, R.J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.715-718,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
4.

国際会議録
国際会議録
4. Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Issacs-Smith, T. ; Williams, J. ; Jones, K.A. ; Lelis, A. ; Tipton, W. ; Scozzie, S. ; Agarwal, A.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1309-1312,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
5.

国際会議録
国際会議録
5. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1041-1044,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. 930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1413-1416,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.757-760,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
8.

国際会議録
国際会議録
8. Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1089-1092,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393