1.

国際会議録
国際会議録
1. MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON
Agarwal, A.M. ; Dunham, S.T.
出版情報: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.149-158,  1993.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1993-6
2.

国際会議録
国際会議録
2. Spatial Variations in Point Defect Concentrations and Their Impact on Submicron Device Structures
Dunham, S.T. ; Agarwal, A.M.
出版情報: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.86-93,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-5