1.

国際会議録
国際会議録
1. Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
L.C. Martin ; D. Clark ; E.P. Ramsay ; A.E. Murphy ; R.F. Thompson
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.891-894,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
R.A.R. Young ; D. Clark ; J.D. Cormack ; A.E. Murphy ; D.A. Smith
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.1065-1068,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
3.

国際会議録
国際会議録
3. Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures
L.C. Martin ; D. Clark ; E.P. Ramsay ; A.E. Murphy ; R.F. Thompson
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.773-776,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. High Temperature Silicon Carbide CMOS Integrated Circuits
D.T. Clark ; E.P. Ramsay ; A.E. Murphy ; D.A. Smith ; R.F. Thompson
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.726-729,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
5.

国際会議録
国際会議録
5. Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics
M.H. Weng ; A.E. Murphy ; C. Ryan ; B.J.D. Furnival ; D.A. Smith
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.492-495,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
6.

国際会議録
国際会議録
6. Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
M.H. Weng ; M.I. Idris ; H.K. Chan ; A.E. Murphy ; D.A. Smith
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.631-634,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
7.

国際会議録
国際会議録
7. Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
L.C. Martin ; H.K. Chan ; D. Clark ; E.P. Ramsay ; A.E. Murphy
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.428-431,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
8.

国際会議録
国際会議録
8. Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
M.I. Idris ; M.H. Weng ; H.K. Chan ; A.E. Murphy ; D.A. Smith ; R.A.R. Young ; E.P. Ramsay ; D.T. Clark ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon Carbide and Related Materials 2016.  pp.513-516,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897