1.

国際会議録
国際会議録
1. Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
M.H. Weng ; M.I. Idris ; H.K. Chan ; A.E. Murphy ; D.A. Smith
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.631-634,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
L.C. Martin ; H.K. Chan ; D. Clark ; E.P. Ramsay ; A.E. Murphy
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.428-431,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
3.

国際会議録
国際会議録
3. Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
M.I. Idris ; M.H. Weng ; H.K. Chan ; A.E. Murphy ; D.A. Smith ; R.A.R. Young ; E.P. Ramsay ; D.T. Clark ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon Carbide and Related Materials 2016.  pp.513-516,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897