1.

国際会議録
国際会議録
1. Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments
S.K. Roy ; K. Vassilevski ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.420-423,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
2.

国際会議録
国際会議録
2. Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices
K. Vassilevski ; S.K. Roy ; N. Wood ; A.B. Horsfall ; N.G. Wright
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.411-415,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Discriminating High k Dielectric Gas Sensors
S.K. Roy ; K.V. Vassilevski ; C.J. O'Malley ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1058-1062,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
4.

国際会議録
国際会議録
4. Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics
B.J.D. Furnival ; S.K. Roy ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.837-840,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
5.

国際会議録
国際会議録
5. Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
S.K. Roy ; J.U. Ibanez ; A.G. O'Neill ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon Carbide and Related Materials 2016.  pp.327-330,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
6.

国際会議録
国際会議録
6. On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC
K.V. Vasilevskiy ; S.K. Roy ; N. Wood ; A.B. Horsfall ; N.G. Wright
出版情報: Silicon Carbide and Related Materials 2016.  pp.254-257,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897