1.

国際会議録
国際会議録
1. Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
S. Potbhare ; N. Goldsman ; G. Pennington ; A. Lelis ; J.M. McGarrity
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.847-850,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Investigation of Drain Current Saturation in 4H-SiC MOSFETs
G. Pennington ; S. Potbhare ; N. Goldsman ; D. Habersat ; A. Lelis ; J.M. McGarrity ; C. Ashman
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.811-814,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557