1.

国際会議録
国際会議録
1. Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs
R. Green ; A. Lelis ; M. El ; D. Habersat
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.677-680,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
2.

国際会議録
国際会議録
2. Investigation of Drain Current Saturation in 4H-SiC MOSFETs
G. Pennington ; S. Potbhare ; N. Goldsman ; D. Habersat ; A. Lelis ; J.M. McGarrity ; C. Ashman
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.811-814,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557