1.

国際会議録
国際会議録
1. Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
I.G. Ivanov ; A. Gällström ; S. Leone ; O. Kordina ; N.T. Son
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.405-408,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
X.T. Trinh ; A. Gällström ; N.T. Son ; S. Leone ; O. Kordina
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.385-388,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
3.

国際会議録
国際会議録
3. Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
N.T. Son ; V. Ivády ; A. Gali ; A. Gällström ; S. Leone
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.217-220,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
A. Gällström ; B. Magnusson ; F.C. Beyer ; A. Gali ; N.T. Son
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.211-216,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
V. Ivády ; B. Somogyi ; V. Zólyomi ; A. Gällström ; N.T. Son
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.205-210,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
N.T. Son ; P. Carlsson ; A. Gällström ; B. Magnusson ; E. Janzén
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.401-404,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
7.

国際会議録
国際会議録
7. Theory of Neutral Divacancy in SiC: A Defect for Spintronics
A. Gali ; A. Gällström ; N.T. Son ; E. Janzén
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.395-398,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648