1.

国際会議録
国際会議録
1. ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING
Puttock, M. S. ; Thomas, H. ; Morgan, D. V. ; Rossow, U. ; Zahn, D. R. T. ; Richter, W. ; Hilton, K. P. ; Woodward, J.
出版情報: Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A..  pp.255-260,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 190
2.

国際会議録
国際会議録
2. Raman Spectroscopy Investigation of (SiC)1-x(AlN)x Layers Formed by Ion Implantation in 6H-SiC
Zahn, D. R. T. ; Werninghaus, T. ; Thumer, M. ; Pezoldt, J. ; Heera, V.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.729-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
3.

国際会議録
国際会議録
3. Trapping Behavior of Thin Siliconoxynitride Layers Prepared by Rapid Thermal Processing
Beyer, R. ; Burghardt, H. ; Reich, R. ; Thomas, E. ; Grambole, D. ; Herrmann, F. ; Scholz, T. ; Albrecht, J. ; Zahn, D. R. T. ; Gessner, T.
出版情報: Materials reliability in microelectronics VI : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.421-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 428
4.

国際会議録
国際会議録
4. Influence of oxidation conditions on the formation of InAs quantum dots in an aluminum oxide matrix
Tenne, D. A. ; Bajutova, O. R. ; Bakarov, A. K. ; Toropov, A. I. ; Milekhin, A. G. ; Haisler, V. A. ; Zahn, D. R. T.
出版情報: Advanced topics in optoelectronics, microelectronics, and nanotechnologies : 21-23 November, 2002, Bucharest, Romania.  pp.282-287,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5227
5.

国際会議録
国際会議録
5. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry [5940-18]
Scholtz, R ; M-ller, A. ; M-ller, L. ; Thurzo, I. ; Paez, B. A. ; Mancera, L. ; Zahn, D. R. T. ; Pannermann, C. ; Univ. Paderborn (Germany)
出版情報: Organic Field-Effect Transistors IV.  pp.59400I-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5940
6.

国際会議録
国際会議録
6. Combined Raman spectroscopic and electrical characterization of the conductive channel in pentacene based OFETs [5940-15
Paez, B. A. ; Thurzo, S. I. ; Salvan, G. ; Schotz, R. ; Zahn, D. R. T. ; von Seggem, H.
出版情報: Organic Field-Effect Transistors IV.  pp.59400F-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5940
7.

国際会議録
国際会議録
7. Combined electrical and Raman characterization of C60-based organic field effect transistors
Paez, B. A. ; Bartzsch, M. ; Salvan, G. ; Scholz, R. ; Kampen, T. U. ; Zahn, D. R. T.
出版情報: Organic Field Effect Transistors II.  pp.63-70,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5217
8.

国際会議録
国際会議録
8. Interaction of metals with perylene derivatives as a model systems for contact formation in OFET structures
Paez, B. A. ; Salvan, G. ; Scholz, R. ; Kampen, T. U. ; Zahn, D. R. T.
出版情報: Organic Field Effect Transistors II.  pp.210-218,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5217