1.

国際会議録
国際会議録
1. EFFECT OF ITOX-PROCESS ON THE ELECTRICAL CHARACTERISTICS OF BURIED OXIDE IN LOW-DOSE SIMOX
Hamada, K. ; Hamajima, T. ; Kitano, T. ; Ohnishi, H. ; Yoshino, A.
出版情報: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1395-1405,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-1(2)
2.

国際会議録
国際会議録
2. Influence of oxygen implant dose on front and back channel characteristics of MOSFET's fabricated in single and double-implant SIMOX substrates
Yoshino, A. ; Ma, T.P. ; Okumura, K.
出版情報: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.312-317,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-11
3.

テクニカルペーパー
テクニカルペーパー
3. Aspect-Oriented Requirements Modeling and Analysis Methodology for Multiple Product Lines of Distributed Real-Time Automotive Software Systems.
Aoyama, M. ; Yoshino, A.
出版情報: 2007 SAE world congress : technical paper.  2007.  Warrendale, Penn..  Society of Automotive Engineers
シリーズ名: Society of Automotive Engineers technical paper series
シリーズ巻号: 2007