1.

国際会議録
国際会議録
1. POSITRON ANNIHILATION AND ELECTRON RESONANCE OF ELECTRON-IRRADIATED 3C-SiC
Itoh, Hisayoshi ; Yoshikawa, Masahito ; Wei, Long ; Tanigawa, Shoichiro ; Nashiyama,. Isamu ; Misawa, Shunji ; Okumura, Hahime ; Yoshida, Sadafumi
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.331-336,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
2.

国際会議録
国際会議録
2. Characterization Of n-Type Layer By S+ Ion Implantation In 4H-SiC
Tanaka, Yasunori ; Kobayashi, Naoto ; Okumura, Hajime ; Yoshida, Sadafumi ; Hasegawa, Masataka ; Ogura, Masahiko ; Tanoue, Hisao
出版情報: Wide-bandgap electronic devices.  pp.T8.6-,  2001.  Warrendale, PA..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 622