Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching

Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching

著者名:

Lee, Jae-Won

掲載資料名:

Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

468

発行年:

1997

開始ページ:

373

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993723 [155899372X]

言語:

英語

請求記号:

M23500/468

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020780
シリーズID:	PA00000011
会議名:	Symposium on gallium nitride and related materials
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

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