1.

国際会議録
国際会議録
1. Self-Modulating Incorporation of Sb in Si/SiGe Superlatuces during Molecular Beam Epitaxial Growth
Fujita,K. ; Fukatsu,S. ; Usami,N. ; Yaguchi,H. ; Shiraki,Y. ; Ito,R.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.159-164,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
2.

国際会議録
国際会議録
2. Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance
Wong,C.C. ; Mochizuki,M. ; Yaguchi,H. ; Saitoh,T. ; Xiong,Y.-M.
出版情報: International Symposium on Polarization Analysis and Applications to Device Technology.  pp.226-229,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2873
3.

国際会議録
国際会議録
3. Characterization of Sio-doped GaAs using photoellipsometry and photoreflectance
Mochizuki,M. ; Kobayashi,K. ; Yaguchi,H. ; Saitoh,T. ; Xiong,Y.-M.
出版情報: International Symposium on Polarization Analysis and Applications to Device Technology.  pp.270-273,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2873