1.

国際会議録
国際会議録
1. Room-Temperature Sputter-Deposited Gate SiO2 Films for High Quality Poly-Si TFTs
T. Serikawa ; T. Miyamoto ; H. Ueno ; Y. Sugawara ; Y. Uraoka
出版情報: Thin Film Transistor Technology 8.  pp.107-112,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(8)
2.

国際会議録
国際会議録
2. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing and Its Application to Low Temperature poly-Si Thin Film Transistors
Y. Sugawara ; Y. Uraoka ; H. Yano ; T. Hatayama ; T. Fuyuki
出版情報: Thin Film Transistor Technology 8.  pp.173-178,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(8)
3.

国際会議録
国際会議録
3. Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000°C
Y.Z. Yao ; Y. Ishikawa ; K. Sato ; Y. Sugawara ; K. Danno
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.829-832,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
4.

国際会議録
国際会議録
4. Nanoporous Copper Dealloyed from a Nanocrystallized Ticu Alloy
Z.H. Dan ; F.X. Qin ; Y. Sugawara ; I. Muto ; N. Hara
出版情報: Advanced Materials Science and Technology : Selected, peer reviewed papers from the 8th International Forum on Advanced Materials Science and Technology (IFAMST 8) August 1-4, 2012, Fukuoka Institute of Technology, Japan.  pp.72-75,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 750
5.

国際会議録
国際会議録
5. Electrochemical Stability and Oxidation Mechanism of Carbon Support for PEM Fuel Cell
A.P. Yadav ; Y. Sugawara ; A. Nishikata ; T. Tsuru
出版情報: Proton exchange membrane fuel cells 8.  pp.2093-2099,  2008.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(2)
6.

国際会議録
国際会議録
6. Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.541-544,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
7.

国際会議録
国際会議録
7. Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato ; K. Danno
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.389-392,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
8.

国際会議録
国際会議録
8. Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
Y. Sugawara ; Y. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.11-14,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
9.

国際会議録
国際会議録
9. Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
Y. Ishikawa ; Y.Z. Yao ; Y. Sugawara ; K. Danno ; H. Suzuki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.367-370,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
10.

国際会議録
国際会議録
10. Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2
R. Ishii ; K. Nakayama ; H. Tsuchida ; Y. Sugawara
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1015-1018,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603