1.

国際会議録
国際会議録
1. Triaxial Stress Analysis of Cylindrical Pressure Vessels Composed of Two Layers of Orthotropic Elasto-Plastic Materials
S. Okamoto ; Y. Omura
出版情報: Proceedings of the ASME Pressure Vessels and Piping Conference 2005. Volume 3. Design and analysis : presented at 2005 ASME Pressure Vessels and Piping Conference, July 17-21, 2005, Denver, Colorado, USA.  3  pp.41-48,  2005.  New York.  American Society of Mechanical Engineers
シリーズ名: Proceedings of the ASME Pressure Vessels and Piping Division
シリーズ巻号: 2005(3)
2.

国際会議録
国際会議録
2. Impact of Metal Silicide Layout Covering Source/Drain Diffusions on Parasitic Resistance of Triple-Gate SOI MOSFET
K. Yoshimoto ; Y. Omura ; H. Wakabayashi
出版情報: Silicon-on-insulator technology and devices 13.  pp.27-32,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)
3.

国際会議録
国際会議録
3. Impact of Phonon-Limited Mobility Superiority in Double-Gate or Fin FET with a (111) Si and (001) Ge Surface Channel on Device Scaling
T. Yamamura ; S. Sato ; Y. Omura
出版情報: Silicon-on-insulator technology and devices 13.  pp.369-374,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)
4.

国際会議録
国際会議録
4. Origin of Transient Gate Current Observed in Pseudo-MOS Transistor
S. Sato ; T. Nguyen ; S. Cristoloveanu ; Y. Omura
出版情報: Silicon-on-insulator technology and devices 13.  pp.95-100,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)