1.

国際会議録
国際会議録
1. Paramagnetic Defects and Photoluminescence in Carbon Rich a-SiC:H Films: Role of Hydrogen and Excess of Carbon
A.V. Vasin ; A.A. Konchits ; S.P. Kolesnik ; A.V. Rusavsky ; V.S. Lysenko ; A.N. Nazarov ; Y. Ishikawa ; S. Ashok
出版情報: Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A..  pp.321-326,  2007.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 994
2.

国際会議録
国際会議録
2. Carbonization of Porous Silicon for 3C-SiC Growth
A.V. Vasin ; Y. Ishikawa ; N. Shibata ; J. Salonen ; V.P. Lehto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.167-170,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. First Principles Computations Studies: Structural and Electrochemical Behavior of Layered Cathode Materials
J.J. Saavedra-Arias ; R. Thomas ; N.K. Karan ; Y. Ishikawa ; R.S. Katiyar
出版情報: Rechargeable Lithium and Lithium Ion Batteries.  pp.9-18,  2009.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(29)
4.

国際会議録
国際会議録
4. Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000°C
Y.Z. Yao ; Y. Ishikawa ; K. Sato ; Y. Sugawara ; K. Danno
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.829-832,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
5.

国際会議録
国際会議録
5. Electrochemical Behavior of Thallium Ion in Organic Solvents and its Application to Organic Synthesis
T. Tanabe ; K. Uno ; Y. Ishikawa ; S. Nishiyama
出版情報: Organic and Biological Electrochemistry Symposium in Honor of Yoshihiro Matsumura.  pp.7-12,  2008.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 13(20)
6.

国際会議録
国際会議録
6. Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.541-544,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
7.

国際会議録
国際会議録
7. Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato ; K. Danno
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.389-392,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
8.

国際会議録
国際会議録
8. Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
Y. Sugawara ; Y. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.11-14,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
9.

国際会議録
国際会議録
9. Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
Y. Ishikawa ; K. Sato ; Y. Okamoto ; N. Hayashi ; Y.Z. Yao
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.383-386,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
10.

国際会議録
国際会議録
10. Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
Y. Ishikawa ; Y.Z. Yao ; Y. Sugawara ; K. Danno ; H. Suzuki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.367-370,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720