1.

国際会議録
国際会議録
1. Influence of Annealing Treatments on the Morphology and Electrical Properties of GeOI Substrates Obtained by Ge Condensation
J. Damlencourt ; Y. Campidelli ; T. Nguyen ; B. Vincent ; C. Le Royer ; Y. Morand ; S. Cristoloveanu ; L. Clavelier
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.65-72,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(1)
2.

国際会議録
国際会議録
2. Epitaxial Regrowth of Ge on SGOI and GeOI Su,bstrates Obtained by Ge Condensation
J. Damlencourt ; Y. Campidelli ; M. Roure ; B. Vincent ; E. Martinez ; F. Fillot ; B. Arrazat ; T. Nguyen ; S. Cristoloveanu ; L. Clavelier ; Y. Morand
出版情報: Silicon-on-insulator technology and devices 13.  pp.315-320,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)
3.

国際会議録
国際会議録
3. Wet-Cleaning and Surface Characterization of Si₁₋xGex Relaxed Alloys (x=0.2-0.5) After Polishing: Applications for SGOI and Strained Silicon Structures Elaboration
A. Abbadie ; J. M. Hartmann ; P. Besson ; D. Rouchon ; P. Holliger ; C. Di Nardo ; T. Lardin ; Y. Campidelli ; B. Ghyselen ; T. Billon
出版情報: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI.  pp.130-132,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 1(2)