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Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

著者名:
Robertson, L. S.
Warnes, P. N.
Jones, K. S.
Earles, S. K.
Law, M. E.
Downey, D. F.
Falk, S.
Liu, J.
さらに 3 件
掲載資料名:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
610
発行年:
2001
開始ページ:
B4.2
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
言語:
英語
請求記号:
M23500/610
資料種別:
国際会議録

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