1.

国際会議録
国際会議録
1. Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
J.W. Steeds ; N. Peng ; W. Sullivan
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.409-412,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
2.

国際会議録
国際会議録
2. A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC
W. Sullivan ; J.W. Steeds
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.319-322,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Reconfiguration Management and Application Development Upon a Dynamically Reconfigurable Processing Module
W. Sullivan ; P. Norridge ; A. Wishart
出版情報: Proceedings of DASIA 2011 : DAta Systems in Aerospace : 17-20 May 2011, San Anton, Malta.  2011.  Noordwijk.  ESA Communications
シリーズ名: ESA SP
シリーズ巻号: 694