Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC

Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

213

終了ページ:

218

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

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2 国際会議録 Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC Zvanut, M.E., Konovalov, V.V., Mitchel, W.C., Mitchell, W.D. Trans Tech Publications	8 国際会議録 Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC Kalabukhova, E.N., Lukin, S.N., Savchenko, D.V., Sitnikov, A.A., Mitchel, W.C., Smith, S.R., Greulich-Weber, S. Trans Tech Publications
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