Boron Gettering by Fluorine in Ion-Implanted Silicon

Boron Gettering by Fluorine in Ion-Implanted Silicon

著者名:

掲載資料名:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

469

発行年:

1997

開始ページ:

499

出版情報:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

言語:

英語

請求記号:

M23500/469

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016586
シリーズID:	PA00000011
会議名:	Symposium on defects and diffusion in silicon processing
回次:	1997
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

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2 国際会議録 The Mechanisms of Iron Gettering in Silicon by Boron Ion-Implantation Benton, J.L., Stolk, P.A., Eaglesham, D.J., Jacobson, D.C., Cheng, J.Y., Poate, J.M., Myers, S.M., Haynes, T.E Electrochemical Society	8 国際会議録 Doping of GaN by Ion Implantation: Does it Work? Suvkhanov, A., Hunn, J., Wu, W., Thomson, D., Price, K., Parikh, N., Irene, E., Davis, R. F., Krasnobaev, L. MRS - Materials Research Society
3 国際会議録 Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J. Materials Research Society	9 国際会議録 Effect Of Fluorine On The Diffusion Of Boron In Amorphous Silicon Jacques, J.M., Robertson, L.S., Jones, K.S., Bennett, Joe, Rendon, Mike Materials Research Society
4 国際会議録 Gettering of Iron and Surface Oxygen by High-Energy Boron Ion Implantation in Silicon Jain, A., Mercer, D. E., Yu, N., Lowell, J. K. MRS - Materials Research Society	10 国際会議録 Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., Gehrke, T., Davis, R. F., Krasnobaev, L. Ya. Trans Tech Publications
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6 国際会議録 ION-IMPLANTATION GETTERING OF IMPURITIES IN CdTe Jin, M.H., James, K.M., Jones, C.E., Merz, J.L. Materials Research Society	12 国際会議録 The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon Robertson, L.S., Brindos, R., Jones, K. S., Law, Mark E., Downey, D. F., Falk, S., Liu, J. Materials Research Society

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