1.

国際会議録
国際会議録
1. HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Visitserngtrakul, S. ; Jung, C. O. ; Cordts, B. F. ; Roitman, P. ; Krause, S. J.
出版情報: High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA.  pp.135-140,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 183
2.

国際会議録
国際会議録
2. TWINNING STRUCTURE OF (113) DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Visitserngtrakul, S. ; Barry, J. ; Krause, S.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.955-960,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
3.

国際会議録
国際会議録
3. EFFECT OF IMPLANTATION CONDITIONS ON THE MIROSTRUCTURE OF HIGH-CURRENT, OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Visitserngtrakul, S. ; Cordts, B.F. ; Krause, S.
出版情報: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.161-166,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 157