1.

国際会議録
国際会議録
1. AIGaN/GaN MODFETs for High Frequency and High Power Applications
Leier, H. ; Vescan, A. ; Dietrich, R. ; Wieszt, A. ; Tobler, H. ; Van Hove, J. ; Chow, P.P. ; Wowchak, A.M.
出版情報: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.161-168,  1999.  Pennington, N. J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 99-4
2.

国際会議録
国際会議録
2. Material, Process, and Device Development of GaN-Based HFETs on Silicon Substrates
Johnson, J. W. ; Gao, J. ; Lucht, K. ; Williamson, J. ; Strautin, C. ; Riddle, J. ; Therrien, R. ; Rajagopal, P. ; Roberts, J.C. ; Vescan, A. ; Brown, J.D. ; Hanson, A. ; Singhal, S. ; Borges, R. ; Finer, E.L. ; Linthicum, K.J.
出版情報: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.405-419,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-06
3.

国際会議録
国際会議録
3. Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices
Wolter, S. D. ; Borst, T. H. ; Gluche, P. ; Ebert, W. ; Vescan, A. ; Kohn, E.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.63-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423