1.

国際会議録
国際会議録
1. KINETICS OF SRO AND LRO IN FeAl ALLOYS WITH A2 AND DO3 STRUCTURES
Cadeville, M.C. ; Pierron-Bohnes, V. ; Vennegues, P. ; Afyouni, M. ; Kim, T.H.
出版情報: Kinetics of phase transformations : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.125-130,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 205
2.

国際会議録
国際会議録
2. Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
Perez-Tomas, A. ; Vellvehi, M. ; Mestres, N. ; Millan, J. ; Vennegues, P. ; Stoemenos, J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1059-1062,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth
Grandjean, N. ; Massies, J. ; Vennegues, P. ; Laugt, M. ; Leroux, M.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.67-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
4.

国際会議録
国際会議録
4. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Vennegues, P. ; Dalmasso, S. ; Ruterana, P. ; Hirsch, L. ; Barriere, S.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.59.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
5.

国際会議録
国際会議録
5. Comparative Study of GaN MOVPE Growth Processes Using Two Different "Surface Preparation-Carrier Gas" Combinations
Vennegues, P. ; Haffouz, S. ; Bouille, A. ; Leroux, M. ; Beaumont, B.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.273-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
6.

国際会議録
国際会議録
6. Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE
Sanchez, A.M. ; Ruterana, P. ; Vennegues, P. ; Semond, F. ; Pacheco, F.J. ; Molina, S.I. ; Garcia, R. ; Sanchez-Garcia, M.A. ; Calleja, E.
出版情報: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.157-162,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 743
7.

国際会議録
国際会議録
7. Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
Pezoldt, J. ; Polychroniadis, E. ; Stauden, T. ; Ecke, G. ; Chassagne, T. ; Vennegues, P. ; Leycuras, A. ; Panknin, D. ; Stoemenos, J. ; Skorupa, W.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.213-216,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
8.

国際会議録
国際会議録
8. High Quality GaN on Si(111) Using (AIN/GaN)x Superlattice and Maskless ELO
Lahreche, H. ; Bousquet, V. ; Laugt, M. ; Tottereau, O. ; Vennegues, P. ; Beaumont, B. ; Gibart, P.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1487-1490,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)