1.

国際会議録
国際会議録
1. 'Recovery' Effect of Electron Induced Damage in 4H-SiC Schottky Diodes
Castaldini, A. ; Cavallini, A. ; Rigutti, L. ; Nava, F. ; Fuochi, P.G. ; Vanni, P.
出版情報: Radiation effects and ion-beam processing of materials : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.611-616,  2004.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 792
2.

国際会議録
国際会議録
2. Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
Castaldini, A. ; Cavallini, A. ; Nava, F. ; Fuochi, P.G. ; Vanni, P.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.439-442,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
3.

国際会議録
国際会議録
3. Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Nava, F. ; Vanni, P. ; Verzellesi, G. ; Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Nipoti, R. ; Donolato, C.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.757-762,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356