1.

国際会議録
国際会議録
1. Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
S.K. Haney ; V. Misra ; D.J. Lichtenwalner ; A.K. Agarwal
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.707-710,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2
X.Y. Yang ; B.M. Lee ; V. Misra
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.557-561,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
3.

国際会議録
国際会議録
3. Workfunction Tuning of Nickel Silicide by Varying Nickel and Silicon Composition
N. Biswas ; S. Novak ; B. Lee ; B. Chen ; V. Misra
出版情報: Physics and technology of high-k gate dielectrics III.  pp.295-304,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 1(5)
4.

国際会議録
国際会議録
4. Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric
D. Lichtenwalner ; J. S. Jur, ; S. Novak ; V. Misra ; A. I. Kingon
出版情報: Physics and technology of high-k gate dielectrics 4.  pp.245-252,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(3)
5.

国際会議録
国際会議録
5. Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes
D. Lichtenwalner ; J. M. Hydrick ; V. Vankova ; V. Misra ; J. Maria ; A. I. Kingon
出版情報: Physics and technology of high-k gate dielectrics 4.  pp.449-462,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(3)
6.

国際会議録
国際会議録
6. On the Issue of Work Function Tuning of Nickel Suicide Gates
N. Biswas ; B. Lee ; V. Misra
出版情報: Physics and technology of high-k gate dielectrics 4.  pp.317-332,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(3)
7.

国際会議録
国際会議録
7. Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stacks
V. Misra ; R. Jha ; B. Chen ; J. Lee ; B. Lee
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.275-288,  2006.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(2)
8.

国際会議録
国際会議録
8. Materials and Processes for High k Gate Stacks: Results from the FEP Tzansition Center
C. Osburn ; S. Campbell ; A. Demkov ; E. Eisenbraun ; E. Garfunkel ; F. Gustafsson ; A. I. Kingon ; J. Lee ; D. Lichtenwalner ; G. Lucovsky ; T. Ma ; J. Maria ; V. Misra ; R. Nemanich ; G. Parsons ; D. Schlom ; S. Stemmer ; R. M. Wallace ; J. Whitten
出版情報: Physics and technology of high-k gate dielectrics 4.  pp.389-416,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(3)