1.

国際会議録
国際会議録
1. NUCLEATION OF OXYGEN PRECIPITATES IN A QUENCHED CZOCHRALSKI SILICON CRYSTAL
Ikari, A. ; Haga, H. ; Yoda, O. ; Uedono, A. ; Ujihira, Y.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
2.

国際会議録
国際会議録
2. DEFECT FORMATION BY ION IMPLANTATION IN Cz-Si STUDIED BY A MONOENERGETIC POSITRON BEAM
Uedeno, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Y ; Tanigawa, S. ; Sugiura, J. ; Ogasawara, M. ; Tamura, M,
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1061-1066,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
3.

国際会議録
国際会議録
3. EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM
Kametani, H. ; Akiyama, H. ; Yamaguchi, Y. ; Koumaru, M, ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Uedono, A. ; Watauchi, S. ; Ujihira, Y. ; Suzuki, R. ; Ohgaki, H. ; Mikado, T.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.235-240,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
4.

国際会議録
国際会議録
4. CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tanigawa, S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.277-282,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
5.

国際会議録
国際会議録
5. POINT DEFECT ASSISTED CRYSTAL GROWTH ON BULK ZnSe
Terashima, K. ; Tokizaki, E. ; Kondo, H. ; Tanigawa, S. ; Uedono, A ; Watauchi, S. ; Ujihira, Y.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.111-116,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
6.

国際会議録
国際会議録
6. DEFECTS INTRODUCED BY LOW DOSE Be-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Yasushi ; Tanigawa, Shoichiro ; Wada, K ; Nakanishi, H.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.325-330,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
7.

国際会議録
国際会議録
7. Microstructure Analysis of Polyacetal: Free-Volume Study by Positronium Lifetime Measurement
Ito, K. ; Nanasawa, A. ; Tanimura, N. ; Li, H.L. ; Ohkubo, T. ; Ujihira, Y. ; Nomura, K.
出版情報: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.313-315,  2001.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 363-365