1.

国際会議録
国際会議録
1. NUCLEATION OF OXYGEN PRECIPITATES IN A QUENCHED CZOCHRALSKI SILICON CRYSTAL
Ikari, A. ; Haga, H. ; Yoda, O. ; Uedono, A. ; Ujihira, Y.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
2.

国際会議録
国際会議録
2. EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM
Kametani, H. ; Akiyama, H. ; Yamaguchi, Y. ; Koumaru, M, ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Uedono, A. ; Watauchi, S. ; Ujihira, Y. ; Suzuki, R. ; Ohgaki, H. ; Mikado, T.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.235-240,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
3.

国際会議録
国際会議録
3. CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tanigawa, S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.277-282,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
4.

国際会議録
国際会議録
4. DEFECTS INTRODUCED BY LOW DOSE Be-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Yasushi ; Tanigawa, Shoichiro ; Wada, K ; Nakanishi, H.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.325-330,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
5.

国際会議録
国際会議録
5. Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon
Watanabe, M. ; Kitano, T. ; Asada, S. ; Uedono, A. ; Moriya, T. ; Kawano, T. ; Tanigawa, S. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
出版情報: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.95-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 439
6.

国際会議録
国際会議録
6. Annealing Properties of Defects in BF2+ Implanted Si
Kitano, T. ; Watanabe, M. ; Yaoita, A. ; Oguro, S. ; Uedono, A. ; Moriya, T. ; Tanigawa, S. ; Kawano, T. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
出版情報: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.137-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 438
7.

国際会議録
国際会議録
7. Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon
Watanabe, M. ; Kitano, T. ; Asada, S. ; Uedono, A. ; Moriya, T. ; Kawano, T. ; Tanigawa, S. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
出版情報: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.131-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 438
8.

国際会議録
国際会議録
8. Positron Annihilation Studies of Defects in Ion Implanted Palladium
Kaniava, A. ; Uedono, A. ; Uchida, H. ; Komatsu, A. ; Okada, S. ; Itoh, H.
出版情報: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.156-158,  2001.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 363-365
9.

国際会議録
国際会議録
9. Impact of the Growth Polar Direction on the Optical Properties of GaN Films Grown by Metalorganic Vapor Phase Epitaxy
Setoguchi, A. ; Yoshimura, K. ; Sumiya, M. ; Uedono, A. ; Chichibu, S.F.
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
10.

国際会議録
国際会議録
10. Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. ; Uedono, A. ; Itoh, H. ; Yoshikawa, M. ; Kojima, K. ; Okada, S. ; Nashiyama, I. ; Abe, K. ; Tanigawa, S. ; Frank, T. ; Pensl, G.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.857-860,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)