Diffusion Barrier Reliability With Respect to the Role of TiN Stoichiometry Between Al Metallization and Si Substrate
- 著者名:
- 掲載資料名:
- Thin films - structure and morphology : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 441
- 発行年:
- 1997
- 開始ページ:
- 323
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993457 [1558993452]
- 言語:
- 英語
- 請求記号:
- M23500/441
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
North-Holland |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
11
国際会議録
Process integration of TDEAT-based MOCVD TiN as diffusion barrier for advanced Metallization
SPIE-The International Society for Optical Engineering |
Kluwer Academic Publishers |
North-Holland |