1.

国際会議録
国際会議録
1. The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
Wagner, Mt. ; Thinh, N.Q. ; Son, N.T. ; Baranov, P.G. ; Mokhov, E.N. ; Hallin, C. ; Chen, W.M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.501-504,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
Chen, W.M. ; Thinh, N.Q. ; Buyanova, I.A. ; Hai, P.N. ; Xin, H.P. ; Tu, C.W. ; Li, Wei ; Pessa, M.
出版情報: Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.  pp.67-72,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 692
3.

国際会議録
国際会議録
3. The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
Wagner, Mt. ; Thinh, N.Q. ; Son, N.T. ; Baranov, P.G. ; Mokhov, E.N. ; Hallin, C. ; Chen, W.M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.501-504,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393