1.

国際会議録
国際会議録
1. Using animation quality metric to improve efficiency of global illumination computation for dynamic environments
Myszkowski, K. ; Tawara, T. ; Seidel, H.-P
出版情報: Human vision and electronic imaging VII : 21-24 January 2002, San Jose, USA.  pp.187-196,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4662
2.

国際会議録
国際会議録
2. Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
Izumi, S. ; Tsuchida, H. ; Tawara, T. ; Kamata, I. ; Izumi, K.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.323-326,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Jikimoto, T. ; Miyanagi, T. ; Nakamura, T. ; Izumi, K.
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.35-46,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
4.

国際会議録
国際会議録
4. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
Tawara, T. ; Tsuchida, H. ; Izumi, S. ; Kamata, I. ; Izumi, K.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.565-568,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
5.

国際会議録
国際会議録
5. Dependence of Micropipe Dissociation on Surface Orientation
Kamata, I. ; Tsuchida, H. ; Izumi, S. ; Tawara, T. ; Izumi, K.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.379-382,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
6.

国際会議録
国際会議録
6. Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
Izumi, S. ; Kamata, I. ; Tawara, T. ; Fujisawa, H. ; Tsuchida, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1085-1088,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Izumi, K.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.229-232,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
8.

国際会議録
国際会議録
8. Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
Izumi, S. ; Fujisawa, H. ; Tawara, T. ; Ueno, K. ; Hiraoka, M.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.685-688,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436