1.

国際会議録
国際会議録
1. A HVEM STUDY OF THE ELECTRON IRRADIATED DEFECTS IN NITROGEN DOPED FZ-Si SINGLE CRYSTAL
Yuzun, Gao ; Takeyama, T.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.937-940,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
2.

国際会議録
国際会議録
2. Bi2O3 rods deposited under atmospheric pressure by means of halide CVD on C-sapphire
Takeyama, T. ; Takahashi, N. ; Nakamura, T. ; Itoh, S.
出版情報: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.518-522,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-09