1.

国際会議録
国際会議録
1. CHARACTERIZATION OF METAL-OXIDE-SILICON INTERFACE BY MONOENERGETIC POSITRON BEAM
Ohjim Yuzuru ; Uedono, Akira ; Wei, Long ; Tabuki, Yasushi ; Tanigawa, Shoichiro
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.313-318,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
2.

国際会議録
国際会議録
2. THE INTERFACIAL REACTIONS IN Ti/Si AND Ni/Si SYSTEMS OBSERVED BY A MONOENERGETIC POSITRON BEAM
Tanigawa, S. ; Wei, Long ; Tabuki, Yasushi
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.319-324,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
3.

国際会議録
国際会議録
3. DEFECTS INTRODUCED BY LOW DOSE Be-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Yasushi ; Tanigawa, Shoichiro ; Wada, K ; Nakanishi, H.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.325-330,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262