1.

国際会議録
国際会議録
1. Doping of 4H-SiC with Group IV Elements
M. Krieger ; M. Rühl ; T. Sledziewski ; G. Ellrott ; T. Palm
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.301-307,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
T. Sledziewski ; G. Ellrott ; W. Rösch ; H.B. Weber ; M. Krieger
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.347-350,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Passivation and Generation of States at P-Implanted Thermally Grown and Deposited NType 4H-SiC/SiO2 Interfaces
T. Sledziewski ; H.B. Weber ; M. Krieger
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.697-700,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
4.

国際会議録
国際会議録
4. Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures
A. Mikhaylov ; T. Sledziewski ; A. Afanasyev ; V. Luchinin ; S. Reshanov
出版情報: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.133-138,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 806
5.

国際会議録
国際会議録
5. Processing and Characterization of MOS Capacitors Fabricated on 2° -Off Axis 4H-SiC Epilayers
M. Vivona ; P. Fiorenza ; T. Sledziewski ; A. Gkanatsiou ; M. Krieger
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.663-666,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
6.

国際会議録
国際会議録
6. Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
T. Sledziewski ; S. Beljakowa ; K. Alassaad ; P. Kwasnicki ; R. Arvinte
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.261-264,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
7.

国際会議録
国際会議録
7. Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation
T. Sledziewski ; A. Mikhaylov ; S. Reshanov ; A. Schöner ; H.B. Weber
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.575-578,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780