1.

国際会議録
国際会議録
1. Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
M. Seiss ; T. Ouisse ; D. Chaussende
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.48-51,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
D. Chaussende ; L. Parent-Bert ; Y.J. Shin ; T. Ouisse ; T. Yoshikawa
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.37-40,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy
L.T.M. Hoa ; T. Ouisse ; M. Seiss ; D. Chaussende
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.331-334,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent
J. Lefebure ; J.M. Dedulle ; T. Ouisse ; D. Chaussende
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.69-72,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)
U. Starke ; C. Coletti ; K. Emtsev ; A.A. Zakharov ; T. Ouisse
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.617-620,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
G.L. Sun ; I.G. Galben-Sandulache ; T. Ouisse ; J.M. Dedulle ; M. Pons
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.63-66,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
7.

国際会議録
国際会議録
7. Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
I.G. Galben-Sandulache ; G.L. Sun ; J.M. Dedulle ; T. Ouisse ; R. Madar
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.55-58,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
8.

国際会議録
国際会議録
8. Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
F. Mercier ; I.G. Galben-Sandulache ; M. Marinova ; G. Zoulis ; T. Ouisse
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.59-62,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
9.

国際会議録
国際会議録
9. Dislocation-Induced Birefringence in Silicon Carbide
T. Ouisse ; D. Chaussende ; L. Auvray ; E. Pernot ; R. Madar
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.271-274,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
10.

国際会議録
国際会議録
10. Spiral Step Dissociation on PVT Grown SiC Crystals
M. Seiss ; T. Ouisse ; D. Chaussende
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.39-42,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780