1.

国際会議録
国際会議録
1. Development of high time resolution measurement system of frequency characteristics in bioelectrical impedance for biodynamic analysis
T. Nakamura ; T. Kusuhara ; Y. Yamamoto
出版情報: Sixth International Symposium on Instrumentation and Control Technology: Signal Analysis, Measurement Theory, Photo -Electronic Technology, and Artificial Intelligence : 13-15 October 2006, Beijing, China.  pp.63571S-1-63571S-5,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6357
2.

国際会議録
国際会議録
2. Enhancement of Upconversion Luminescence from Er Doped Al2O3 Films by a Thin Metal Layer
T. Nakamura ; M. Fujii ; Y. Usui ; T. Aisaka ; S. Hayashi
出版情報: Physics and Chemistry of Luminescent Materials, including the 4th Symposium on Persistent Phosphors.  pp.87-93,  2009.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(31)
3.

国際会議録
国際会議録
3. Via Filling Electrodeposition by Using Periodic-Reverse Current
K.N. Kondo ; T. Nakamura ; D. Mikami ; T. Okubo
出版情報: Electrochemical Processing in ULSI and MEMS 3.  pp.135-140,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(8)
4.

国際会議録
国際会議録
4. Etching Rate Enhancement of Copper by Adding Sulfur Compounds in Chemical-Mechanical Polishing Slurries
T. Kanki ; T. Shirasu ; T. Kimura ; T. Nakamura ; M. Miyajima
出版情報: Electrochemical Processing in ULSI and MEMS 3.  pp.65-75,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(8)
5.

国際会議録
国際会議録
5. Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380° C
Y. Nanen ; M. Aketa ; Y. Nakano ; H. Asahara ; T. Nakamura
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.885-888,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
6.

国際会議録
国際会議録
6. Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
H. Fujiwara ; M. Konishi ; T. Ohnishi ; T. Nakamura ; K. Hamada
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.694-697,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
7.

国際会議録
国際会議録
7. Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation
M. Satoh ; S. Nagata ; T. Nakamura ; H. Doi ; M. Shibagaki
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.679-682,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
8.

国際会議録
国際会議録
8. Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
K. Nomoto ; M. Satoh ; T. Nakamura
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1325-1328,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices
D. Ikeguchi ; T. Kirino ; S. Mitani ; Y. Nakano ; T. Nakamura
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.765-768,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
10.

国際会議録
国際会議録
10. 4H-SiC Trench Structure Schottky Diodes
M. Aketa ; Y. Yokotsuji ; M. Miura ; T. Nakamura
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.933-936,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720