1.

国際会議録
国際会議録
1. Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers
Sueoka,K. ; Akatsuka,M. ; Onno,T. ; Asayama,E. ; Koike,Y. ; Adachi,N. ; Sadamitsu,S. ; Katahama,H.
出版情報: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.164-179,  2000.  Pennington, N.J., Bellingham, Wash..  Electrochemical Society — SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4218
2.

国際会議録
国際会議録
2. Morphology of Oxide Precipitates in Czochralski Silicon Crystals
Sueoka,K. ; Ikeda,N. ; Yamamoto,T. ; Kobayashi,S.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.523-524,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
3.

国際会議録
国際会議録
3. Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers
Sueoka,K. ; Akatsuka,M. ; Nishihara,K. ; Yamamoto,T. ; Kobayashi,S.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1737-1742,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201