1.

国際会議録
国際会議録
1. Characterization of Defects Generated During Boron Diffusion in SiC
Lin, Xue-feng ; Smith, Stephen P. ; Ma, Xianyun ; Wang, Liang ; Sudarshan, Tangali S. ; Zhang, Qingchun ; Chang, Hsueh-Rong
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.169-174,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
2.

国際会議録
国際会議録
2. Dislocation Content of Etch Pits in Hexagonal Silicon Carbide
Khlebnikov, Igor I. ; Lari, Mohsen B. ; Khlebnikov, Yuri I. ; Bondokov, Robert T. ; Ayyagari, Ramakrishna ; Muzykov, Peter ; Sudarshan, Tangali S. ; Anderson, T. ; Whitlock, J.B.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
3.

国際会議録
国際会議録
3. One of Many Sources of Defect Generation in SiC
Khlebnikov, Igor I. ; Khlebnikov, Yuri I. ; Wood, Colin ; Sudarshan, Tangali S.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
4.

国際会議録
国際会議録
4. Point and Planar Defect Formation in SiC During PVT Growth
Drachev, Roman V. ; Khlebnikov, Yuri I. ; Rhodes, Curtis A. ; Cherednichenko, Dmitry I. ; Khlebnikov, Igor I. ; Sudarshan, Tangali S.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640