1.

国際会議録
国際会議録
1. CVD Growth and Characterization of 4H-SiC Epitaxial Film on (1120) As-Cut Substrates
Zhang, Z. ; Gao, Y. ; Arjunan, A. C. ; Toupitsyn, E. Y. ; Sadagopan, P. ; Kennedy, R. ; Sudarshan, T. S.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.113-116,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
Maximenko, S. ; Soloviev, S. ; Grekov, A. ; Bolotnikov, A. ; Gao, Y. ; Sudarshan, T. S.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.989-992,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. SiC Epitaxial Growth on Carbon
Khlebnikov, I. ; Madangarli, V. ; Sudarshan, T. S.
出版情報: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.129-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 483
4.

国際会議録
国際会議録
4. Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors
Madangarli, V. P. ; Sudarshan, T. S. ; Tin, C. C.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.345-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
5.

国際会議録
国際会議録
5. Correlation Between Oxide Breakdown and Defects in SiC Wafers
Soloviev, S. ; Khlebnikov, I. ; Madangarli, V. ; Sudarshan, T. S.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.351-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
6.

国際会議録
国際会議録
6. A Technique for Rapid Thick Film SiC Epitaxial Growth
Khlebnikov, I. ; Sudarshan, T. S. ; Madangarli, V. ; Capano, M. A.
出版情報: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.123-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 483
7.

国際会議録
国際会議録
7. Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs
Gradinaru, G. ; Kao, N. C. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.
出版情報: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.77-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 483
8.

国際会議録
国際会議録
8. Bulk Breakdown in AlGaN/GaN HFETs
Gradinaru, G. ; Kao, N. C. ; Gaska, R. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.309-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
9.

国際会議録
国際会議録
9. High Electric Field Breakdown of 4H-SiC p-n Junction Diodes
Tin, C. C. ; Madangarli, V. ; Hu, R. ; Luckowski, E. ; Casady, J. ; Isaacs-Smith, T. ; Gradinaru, G. ; Sudarshan, T. S. ; Johnson, R. W.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.111-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
10.

国際会議録
国際会議録
10. Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique
Sudarshan, T. S. ; Madangarli, V. P. ; Gradinaru, G. ; Tin, C. C. ; Hu, R. ; Isaacs-Smith, T.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.99-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423