1.

国際会議録
国際会議録
1. Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
Lingner, T. ; Greulich-Weber, S. ; Spaeth, J.-M.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.505-508,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
2.

国際会議録
国際会議録
2. Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
Semmelroth, K. ; Schmid, F. ; Karg, D. ; Pensl, G. ; Maier, M. ; Greulich-Weber, S. ; Spaeth, J.-M.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.63-66,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436